Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors

Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors

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Product Description

Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors

Technical Specifications

Country
USA
Brand
Biblioscholar
Manufacturer
Biblioscholar
Binding
Paperback
Height
9.69
Length
7.44
Weight
0.78
Width
0.41
NumberOfItems
1
Author
Uhlman, Troy A