IGBT Transistors 600V 10A NPT IGBT
Product Description
IGBT Transistors 600V 10A NPT IGBT
- Manufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 20 A Gate-Emitter Leakage Current: +/- 10 uA Power Dissipation: 139 W Maximum Operating Temperature: + 150 C Package / Case: TO-220 Packaging: Tube
- Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Series: Unit Weight: 0.063493 oz
IGBT Transistors 600V 10A NPT IGBT
Technical Specifications
You might also like
Graph Paper Notebook: Blue Geometric Low Poly 7.44" x 9.69" Composition Notebook Style Journal 5x5 Grid for Graphing, Mathematics, and Engineering
Owen Sewn Heavy Duty 40inx50in Nylon Laundry Bag
Beckham Hotel Collection Dobby Striped Duvet Cover Set - Luxury Soft Brushed Microfiber with Matching Shams - Full/Queen - Chocolate
SWDZM Women's Standard Latin Dance Shoes Satin Ballroom Model-40303 Black 6.5 US
Alpinestars Tech 1 Motocross Boot - Black/White/Red - 13
Smiling Tooth Fairy Dentist Charm Bead for Bracelet .925 Sterling Silver
Dell TSFM-IR01 1800MP 2400MP Remote GF534 310-7581
Tescat iPhone 6 Plus and 6s Plus Waterproof Case and Sports Kits 5.5 Inch Designed for Outdoor Sports Compatible with GoPro Accessories