GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model (Woodhead Publishing Series in Electronic and Optical Materials)

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model (Woodhead Publishing Series in Electronic and Optical Materials)

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Product Description

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model (Woodhead Publishing Series in Electronic and Optical Materials)

Technical Specifications

Country
USA
Brand
Elsevier
Manufacturer
Woodhead Publishing
Binding
Paperback
IsAdultProduct
Height
9.01998196
Length
5.97998804
Weight
0.78043640748
Width
0.62
ReleaseDate
2024-05-31T00:00:01Z
NumberOfItems
1
Author
Chauhan, Yogesh Singh, Pampori, Ahtisham Ul Haq, Ahsan, Sheikh Aamir