1200V 40mΩ SiC MOSFET TO-247-4 Silicon Carbide Power Transistor (SiC MOSFET 80mΩ 1200V TO-247-4)
Product Description
1200V 40mΩ SiC MOSFET TO-247-4 Silicon Carbide Power Transistor (SiC MOSFET 80mΩ 1200V TO-247-4)
- Silicon Carbide (SiC) MOSFET rated 1200V with low on-resistance 40mΩ, suitable for high efficiency power switching and energy conversion applications.
- TO-247-4 package design provides improved thermal performance and stable high-power operation for industrial electronic systems.
- Suitable for power supply systems, motor drives, inverters and high-voltage switching circuits requiring fast response and low loss performance.
- Wide bandgap semiconductor structure enables higher efficiency, better thermal stability and reduced switching losses compared to traditional silicon devices.
- Designed for industrial electronics, power management systems and advanced energy conversion applications in engineering and research environments.
Technical Specifications
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